Diffusion Furnaces

Wafer size 150 mm

Capabilities

Wet and dry oxidation of silicon and silicon nitride

POCl3/BBr3 diffusion doping

Undoped Polysilicon LPCVD

Stoichiometric Si3N4 LPCVD

Implant activation

Impurity gettering

Wafer bonding

Sintering

Oxidation tube quartz: 

5 tubes

Typical oxide thickness: 0.1-3 μm

Batch Size: 48

Temperatures: 600-1050 °C

Gases: N2, H2O, O2, C2H2Cl2 (1,2-DCE)

Batch uniformity: < 2%

Wafer uniformity: < 3%

Oxidation tube SiC: 

Typical oxide thickness: 0.1-2 μm

Batch Size: 48

Temperatures: 600-1250 °C

Gases: N2, H2O, O2, HCl

Batch uniformity: < 2%

Wafer uniformity: < 3%

POCl3:

Typical resistivity range: 2-13 Ohm/sq.

Batch Size: 48

Temperatures: 600-1050 °C

Gases: N2, O2, POCl3

Batch uniformity (resistivity): < 10%

Wafer uniformity (resistivity): < 10%

BBr3:

Typical resistivity range: 20-24 Ohm/sq.

Batch Size: 48

Temperatures: 600-1050 °C

Gases: N2, O2, BBr3

Batch uniformity (resistivity): < 10%

Wafer uniformity (resistivity): < 10%

LPCVD-undoped Polysilicon

Typical film thickness: 1 – 1000 nm

Refractive index at 632.8 nm: 3.8-4.0

Batch Size: 48

Deposition rate: 8-9 nm/min

Gases: SiH4, N2

Deposition Temperature: 620 °C

Batch uniformity: < 5%

Wafer uniformity: < 3%

Options: Continuous growth, interrupted growth

LPCVD-Si3N4 (stoichiometric)

Typical film thickness: 1 – 1000 nm

Refractive index at 632.8 nm: 1.99 – 2.01

Batch Size: 48

Deposition rate: 3 nm/min

Gases: H2SiCl2, NH3, N2

Deposition Temperature: 780-760 °C Gradient

Batch uniformity: < 5%

Wafer uniformity: < 3%

Residual stress: 0.5-2000 MPa