
Wafer size: 150 mm
Batch size: 24
Materials: Al2O3
Precursors: TMA, H2O, O3
Purge gas: N2
Deposition Temperature: 100-300 °C
Typical film thickness: 1 – 100 nm
Refractive index at 631.8 nm: 1.6-1.7
Deposition rate: ca. 1 Å/cycle
Batch uniformity: < 2%
Wafer uniformity: < 1%
ALD utilizes self-limiting reactions to enable highly controlled conformal growth on high aspect ratio surfaces at low deposition temperatures. The deposited films are pinhole-free, and the deposition parameters can be tailored to optimize the Al2O3 properties toward surface passivation, antireflective coating, low permeability, or just as a protective coating.