Model: Tandem Accelerator
Manufacturer: NEC
Area: MiNaLab Clean Room

Material Class:

 Vacuumcompatible solids

Technology Description:

 Ion implantation is a materials engineering process by which ions of a material can be implanted into another solid, thereby changing the physical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as various applications in materials science research. The ions introduce both a chemical change in the target, in that they can be a different element than the target or induce a nuclear transmutation, and a structural change, in that the crystal structure of the target can be damaged or even destroyed by the energetic collision cascades.

Technical Information:

Available elements for implantation: H, D, Li, B, C, N, Mg, Al, Si, P, Fe, Ag, Ni, Cr, Ge.

Terminal Voltage: 1MV

Target heating: up to 500 °C.

Accelerating energy: 33 keV (source acceleration) and 400 – 2000 keV (for simple charge).

Sample size: up to 4'' wafers.

Contact:

Viktor Bobal

Senior Engineer

UiO MiNaLab

Responsible for the ion beam techniques as UiO MiNaLab, as well as the thermal processes. In addition tool responsible on multiple tools.

+47 90713892
v.m.bobal@fys.uio.no