DRIE Deep Si etcher

Oxford PlasmaPro 100 Estrelas Deep Reactive Ion Etcher

Dry etcher for etching of Silicon, Silicon oxide, Silicon Nitride and organic material.

 

Process Gases:

SF6, C4F8, CHF3, O2, Ar

 

Process Pressure:

0 – 250 mTorr

 

RF Power:

ICP: up to 5000W @ 2MHz

Bias: up to 500W @ 13.56MHz or 300W @ 200kHz

 

Allowed substrates:

Silicon Wafers, Wafer pieces on a carrier wafer, Glass wafers

 

Masking material:

Photoresist, Silicon Oxide, Aluminum (for low bias processes)