Model: TFS 200- 148
Manufacturer: Beneq
Area: MiNaLab Clean Room

Technology Description:

The ALD technique builds new surfaces by exploiting self-limiting reactions between highly reactive gas molecules and active sites on surfaces. The self-limiting nature of the process ensures conformal and pin-hole free film on surfaces with complex geometries.  The principle behind the technique is to split a chemical reaction between two compounds into a sequential process, where each compound is allowed to saturate a substrate or support in an alternating manner. This strategy provides a digital control of thickness of the deposited material.

Technical Information:


Deposition chamber accommodating samples up to 200 mm in diameter and 5 mm in height (2D chamber).

Large 3D chamber available, for 3D samples up to 200 mm in diameter and 100 mm in height.

Ozone generator in the instrument.

N2-generator providing >5N N2 directly connected to the ALD.

Thermal ALD deposition.

Plasma-enhanced ALD deposition.

Deposition temperature range: RT – 500 ºC.

Two hot sources available; can be heated to 300 ºC and 500 ºC.

Four RT sources evaporated from own vapor pressure.

QCM (Quartz Crystal Microbalance) available to investigate sub-cycle parameters.

Typical deposition rates at 200 ºC ~1nm/min, with 15 minutes added to each deposition for pumping and venting.

Materials: Al2O3, TiO2, ZnO, ZnO:Al.

Sample requirements:

The samples must be able to fit reasonably into the chamber and enable a good flow across the reaction chamber. Otherwise, these deposition methods can be used to deposit on all surfaces – organic or inorganic (i.e. metals, semiconductors, glasses, plastic, paper, etc.). Must be able to withstand vacuum, as process operates at ~1 mbar.



Vegard Rønning

Senior Engineer

UiO MiNaLab

Background In material science and nanotechnology from UiO.
Experience with design and operation of vacuum and cryogenic systems for electrical and optical characterization. 3D modeling and CAD.
Responsible for the laser cutter, atomic layer deposition and 3D printer at UiO MiNaLab.

+47 228 52 840 / +47 473 74 173