Model: TFS 200- 148
Manufacturer: Beneq
Area: MiNaLab Clean Room

Technology Description:

 The ALD technique builds new surfaces by exploiting self-limiting reactions between highly reactive gas molecules and active sites on surfaces. The self-limiting nature of the process ensures conformal and pin-hole free film on surfaces with complex geometries.  The principle behind the technique is to split a chemical reaction between two compounds into a sequential process, where each compound is allowed to saturate a substrate or support in an alternating manner. This strategy provides a digital control of thickness of the deposited material.

Technical Information:

 

Deposition chamber accommodating samples up to 200 mm in diameter and 5 mm in height (2D chamber).

Large 3D chamber available, for 3D samples up to 200 mm in diameter and 100 mm in height.

Ozone generator in the instrument.

N2-generator providing >5N N2 directly connected to the ALD.

Thermal ALD deposition.

Plasma-enhanced ALD deposition.

Deposition temperature range: RT – 500 ºC.

Two hot sources available; can be heated to 300 ºC and 500 ºC.

Four RT sources evaporated from own vapor pressure.

QCM (Quartz Crystal Microbalance) available to investigate sub-cycle parameters.

Typical deposition rates at 200 ºC ~1nm/min, with 15 minutes added to each deposition for pumping and venting.

Materials: Al2O3, TiO2, ZnO, ZnO:Al.

Sample requirements:

 The samples must be able to fit reasonably into the chamber and enable a good flow across the reaction chamber. Otherwise, these deposition methods can be used to deposit on all surfaces – organic or inorganic (i.e. metals, semiconductors, glasses, plastic, paper, etc.). Must be able to withstand vacuum, as process operates at ~1 mbar.