Technology Description: |
The ALD technique builds new surfaces by exploiting self-limiting reactions between highly reactive gas molecules and active sites on surfaces. The self-limiting nature of the process ensures conformal and pin-hole free film on surfaces with complex geometries. The principle behind the technique is to split a chemical reaction between two compounds into a sequential process, where each compound is allowed to saturate a substrate or support in an alternating manner. This strategy provides a digital control of thickness of the deposited material. |
Technical Information:
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Deposition chamber accommodating samples up to 200 mm in diameter and 5 mm in height (2D chamber). Large 3D chamber available, for 3D samples up to 200 mm in diameter and 100 mm in height. Ozone generator in the instrument. N2-generator providing >5N N2 directly connected to the ALD. Thermal ALD deposition. Plasma-enhanced ALD deposition. Deposition temperature range: RT – 500 ºC. Two hot sources available; can be heated to 300 ºC and 500 ºC. Four RT sources evaporated from own vapor pressure. QCM (Quartz Crystal Microbalance) available to investigate sub-cycle parameters. Typical deposition rates at 200 ºC ~1nm/min, with 15 minutes added to each deposition for pumping and venting. Materials: |
Sample requirements: |
The samples must be able to fit reasonably into the chamber and enable a good flow across the reaction chamber. Otherwise, these deposition methods can be used to deposit on all surfaces – organic or inorganic (i.e. metals, semiconductors, glasses, plastic, paper, etc.). Must be able to withstand vacuum, as process operates at ~1 mbar. |